Temperature-dependent transport properties of two-dimensional hole gas in Ge channel modulation-doped square quantum wells

Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells

In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Cheng-Ying Huang, Jeremy J. M. Law, Hong Lu, Debdeep Jena, Mark J. W. Rodwell, and Arthur C. Gossard Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA Materials Department, University of California, Santa Barbara, California 93106-5050, USA Department of Electrical Engineering, ...

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

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Interaction of an electron gas with photoexcited electron-hole pairs in modulation-doped GaAs and CdTe quantum wells

The nature of the correlated electron gas and its response to photo-injected electronhole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of optically-active excitation, magnetoplasmons bound to a mobile valence hole. These excitations are blueshifted from the corresponding transition of the isolat...

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

A Quantum Potential Description of One-Dimensional Time-Dependent Scattering From Square Barriers and Square Wells

The time-dependent scattering o f one-dimensional Gaussian wave packets of various energies incident on (1) a square potential barrier and (2) a square well is examined numerically, using the quantum potential introduced by Bohm. The time-dependent quantum potential is calculated in each case, and the results displayed on three-dimensional computer plots. The particle trajectories from differen...